The roll teeth and at least the inside surfaces of the top sides and bottom are fabricated from a material of construction that minimizes contamination of silicon The material of construction may be tungsten carbide with a cobalt binder The single roll crusher is used for processing polycrystalline silicon
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Get PricePolycrystalline Silicon Carbide Crusher An independent claim is included for producing polycrystalline silicon chunks comprising comminuting a polycrystalline silicon rod into cubic chunks and cleaning the polycrystalline silicon chunks where the comminuting step takes place using a spiked roll crusher having at least one spiked roll which comprises tungsten carbide phases and
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Get PriceIt occupies an intermediate position between amorphous silicon in which there is no long range order and monocrystalline silicon Polycrystalline silicon has an impurity level of 1 part per billion or less For What Is Polycrystalline Silicon Polycrystalline silicon is used mainly in the electronics industry and in photovoltaic solar energy 1
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Get PricePolycrystalline Silin Carbide Crusher polycrystalline silin carbide crusher related contents Bulk Density Chart Silica Flour 80 1282 Silica Gel 42 673 Silica Sand 81 1298 Silicon Carbide 45 721 Silicon Dioxide 48 Silver Powder 69 1105 Slate Crushed 100 1602 Soap Flakes 29 465 Soap Powder 36 577 Soapstone 47 753 Soda Ash 54 865 Soda Ash
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Get PriceThe in use adhesion characteristics of polycrystalline cubic silicon carbide poly SiC films when used as a substrate material in MEMS applications are investigated using micromachined polycrystalline Si poly Si cantilever beam arrays The detachment lengths greater than 1500 μm are obtained corresponding to an apparent work of adhesion of less than mJ/m2 This is to be compared to
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Get PriceAbout Polycrystalline Silicon Polycrystalline Silicon for solar energy applications includes p type and n type silicon Silicon based photovoltaic cells PV Cells for solar energy are fabricated from a positively charged or p type silicon layer underneath a negatively charged or n type silicon layer
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